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Proceedings Paper

High-gain high-sensitivity resonant Ge/Si APD photodetectors
Author(s): John E. Bowers; Daoxin Dai; Yimin Kang; Mike Morse
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Paper Abstract

In this paper we present a separate-absorption-charge-multiplication Ge/Si avalanche photodiode, which has a high gain-bandwidth product (e.g., >860GHz at a wavelength of 1310nm). Such a high gain-bandwidth product is attributed to the peak enhancement of the frequency response at the high frequency range. From a small signal analysis, we establish an equivalent circuit model which includes a capacitance parallel connected with an inductance due to the avalanche process. When the APD operates at high bias voltages, the LC circuit provides a resonance in the avalanche, which introduces a peak enhancement.

Paper Details

Date Published: 4 May 2010
PDF: 8 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76603H (4 May 2010); doi: 10.1117/12.855030
Show Author Affiliations
John E. Bowers, Univ. of California, Santa Barbara (United States)
Daoxin Dai, Univ. of California, Santa Barbara (United States)
Yimin Kang, Intel Corp. (United States)
Mike Morse, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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