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Proceedings Paper

High-power narrow-linewidth optically pumped dilute nitride disk laser with emission at 589 nm
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Paper Abstract

We demonstrate a dilute nitride (GaInAsN) based gain mirror capable of meeting the wavelength and linewidth requirements for laser guide stars. The mirror was grown by molecular beam epitaxy on a GaAs(100) substrate. The heat generated during laser operation was extracted from the active region with a wedged intracavity CVD diamond. An intracavity birefringent filter was employed for wavelength selection and a YAG etalon for linewidth narrowing. The laser radiation was intra-cavity frequency doubled to achieve emission at 589 nm. The frequency-doubled semiconductor disk laser emitted a narrow linewidth beam (~20 MHz) at 589 nm. In a free-running mode, the laser emitted more than 6W of yellow-orange light with a maximum conversion efficiency of 15.5%.

Paper Details

Date Published: 28 April 2010
PDF: 7 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 772016 (28 April 2010); doi: 10.1117/12.854747
Show Author Affiliations
Tomi Leinonen, Tampere Univ. of Technology (Finland)
Antti Härkönen, Tampere Univ. of Technology (Finland)
Ville-Markus Korpijärvi, Tampere Univ. of Technology (Finland)
Mircea Guina, Tampere Univ. of Technology (Finland)
Ryan J. Epstein, Areté Associates (United States)
James T. Murray, Areté Associates (United States)
Gregory J. Fetzer, Areté Associates (United States)


Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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