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Proceedings Paper

Formation of molecular transistor electrodes by electromigration
Author(s): A. S. Stepanov; E. S. Soldatov; O. V. Snigirev
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Paper Abstract

In this work we obtained the gaps less than 5 nm wide in the thin (15 nm) gold films. These gaps can be used for the creation of the room-temperature single-electron transistor. We demonstrated the need of deposition of Au without an adhesive layer and elaborated the technique of the creation of thin (15 nm) and narrow (200 nm) gold electrodes on Al2O3. It provides a sufficient adhesion of Au film even without a buffer layer and subsequent successive gap implementation.

Paper Details

Date Published: 26 February 2010
PDF: 8 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752112 (26 February 2010); doi: 10.1117/12.854681
Show Author Affiliations
A. S. Stepanov, Russian Research Ctr. Kurchatov Institute (Russian Federation)
E. S. Soldatov, Lomonosov Moscow State Univ. (Russian Federation)
O. V. Snigirev, Russian Research Ctr. Kurchatov Institute (Russian Federation)
Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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