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Proceedings Paper

Ray tracing analysis of light scattering properties of randomly nano-textured ZnO films
Author(s): M. Schulte; K. Bittkau; B. E. Pieters; S. Jorke; H. Stiebig; J. Hüpkes; U. Rau
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Paper Abstract

We investigate the scattering behavior of nano-textured ZnO-Air and ZnO-Silicon interfaces for the application in thin film silicon solar cells. Contrary to the common approach, the numerical solution of the Maxwell's equations, we introduce a ray tracing approach based on geometric optics and the measured interface topography. The validity of this model is discussed by means of SNOM measurements and numerical solutions of the Maxwell's equations. We show, that the ray tracing model can qualitatively describe the formation of micro lenses, which are the dominant feature of the local scattering properties of the investigated interfaces. A quantitative analysis for the ZnO-Silicon interface at λ=488 nm shows that the ray tracing model corresponds well to the numerical solution of the Maxwell's equations. At λ=780 nm, a good agreement up to distance of approximately 1.5 μm from the topography minimum is achieved. The reduced effective wavelength in silicon leads to a better description of the ZnO-Silicon interface with respect to the ZnO-Air interface by the ray tracing model.

Paper Details

Date Published: 14 May 2010
PDF: 11 pages
Proc. SPIE 7717, Optical Modelling and Design, 77170N (14 May 2010); doi: 10.1117/12.854560
Show Author Affiliations
M. Schulte, Forschungszentrum Jülich GmbH (Germany)
K. Bittkau, Forschungszentrum Jülich GmbH (Germany)
B. E. Pieters, Forschungszentrum Jülich GmbH (Germany)
S. Jorke, Forschungszentrum Jülich GmbH (Germany)
H. Stiebig, Malibu GmbH & Co. KG (Germany)
J. Hüpkes, Forschungszentrum Jülich GmbH (Germany)
U. Rau, Forschungszentrum Jülich GmbH (Germany)


Published in SPIE Proceedings Vol. 7717:
Optical Modelling and Design
Frank Wyrowski; John T. Sheridan; Jani Tervo; Youri Meuret, Editor(s)

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