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Proceedings Paper

Blue and red electroluminescence of silicon-rich oxide light emitting capacitors
Author(s): A. Morales-Sánchez; M. Aceves-Mijares; A. A. González-Fernández; K. Monfil-Leyva; J. Juvert; C. Domínguez-Horna
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Paper Abstract

Electroluminescent properties of thin silicon-rich oxide (SRO) films deposited by low pressure chemical vapor deposition (LPCVD) were studied. The gas flow ratio Ro = N2O/SiH4 was changed to obtain different silicon concentrations within the SRO films. After deposition, SRO films were thermally annealed at 1100ºC for 3h in N2 atmosphere in order to create silicon nanoparticles (Si-nps). Simple capacitive structures like Polysilicon/SRO/n-Si were used for the study. These light emitting capacitors (LECs) show intense blue (~466) and red EL (~685) at room temperature depending on the silicon excess within the SRO films. Electroluminescence in these LECs is obtained at direct current (DC) at both forward and reverse bias conditions. Nevertheless, a stronger whole area EL is obtained when devices are forwardly biased.

Paper Details

Date Published: 18 May 2010
PDF: 7 pages
Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77190N (18 May 2010); doi: 10.1117/12.854433
Show Author Affiliations
A. Morales-Sánchez, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
Ctr. de Nanociencias y Nanotecnología (Mexico)
M. Aceves-Mijares, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
A. A. González-Fernández, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
K. Monfil-Leyva, Instituto Nacional de Astrofísica, Óptica y Electrónica (Mexico)
J. Juvert, Instituto de Microelectrónica de Barcelona (Spain)
C. Domínguez-Horna, Instituto de Microelectrónica de Barcelona (Spain)


Published in SPIE Proceedings Vol. 7719:
Silicon Photonics and Photonic Integrated Circuits II
Giancarlo Cesare Righini, Editor(s)

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