Share Email Print
cover

Proceedings Paper

Oxide confined 850-nm VCSELs for high-speed datacom applications
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Vertical cavity surface emitting lasers (VCSELs) are low cost and reliable light sources for high-speed local area and storage area network (LAN/SAN) optical fiber data communication systems and all other short-reach high-speed data transfer applications. The intrinsic limitations of copper-based electrical links at data rates exceeding 10 Gbit/s leads to a progressive movement wherein optical communication links replace traditional short-reach (300 m or shorter) copper interconnects. The wavelength of 850 nm is the standard for LAN/SAN applications as well as for several other evolving short-reach application areas including Fibre Channel, InfiniBand, Universal Serial Bus (optical USB), and active optical cables. Here we present our recent results on 850 nm oxide-confined VCSELs operating at data bit rates up to 40 Gbit/s at low current densities of ~10 kA/cm2 ensuring device reliability and long-term stability based on conventional industry certification specifications. The relaxation resonance frequencies, damping factors, and parasitic cut-off frequencies are determined for VCSELs with oxide-confined apertures of various diameters. At the highest optical modulation rates the VCSELs' high speed operation is limited by parasitic cut-off frequencies of 24-28 GHz. We believe that by further reducing device parasitics we will produce current modulated VCSELs with optical modulation bandwidths larger than 30 GHz and data bit rates beyond 40 Gbit/s.

Paper Details

Date Published: 27 April 2010
PDF: 7 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77201W (27 April 2010); doi: 10.1117/12.854276
Show Author Affiliations
Philip Moser, Technische Univ. Berlin (Germany)
Alex Mutig, Technische Univ. Berlin (Germany)
James A. Lott, VI Systems GmbH (Germany)
Sergey Blokhin, Technische Univ. Berlin (Germany)
Gerrit Fiol, Technische Univ. Berlin (Germany)
Alexey M. Nadtochiy, Technische Univ. Berlin (Germany)
Nikolai N. Ledentsov, VI Systems GmbH (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

© SPIE. Terms of Use
Back to Top