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Proceedings Paper

The electrical properties of the diamond field effect transistor
Author(s): Yi Zhang; Lin-jun Wang; Jian Huang; Ke Tang; Fengjuan Zhang; Qian Fang; Qingkai Zeng; Run Xu; Jijun Zhang; Jiahua Min; Yiben Xia
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Paper Abstract

200 μm thick free-standing polycrystalline diamond film has been grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surface of diamond is characterized by Raman scattering, scanning electron microscopy (SEM) and atomic force microscopy (AFM) method. AFM and SEM results indicate the nucleation surface is quite smooth with a mean surface roughness (RMS) of about 10 nm. Raman scattering result indicates of high quality nucleation diamond film. A diamond field effect transistor is fabricated on hydrogenated diamond nucleation surface, using standard lithographic procedures. Device with aluminum (Al) gate electrode, to form Schottky barrier with diamond, as well as Au source and drain electrodes to form ohmic contact with diamond, operates as effective enhancement-mode metal-semiconductor field-effect transistors at room temperature, showing clear modulation of channel current.

Paper Details

Date Published: 2 December 2009
PDF: 6 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76312Q (2 December 2009); doi: 10.1117/12.854267
Show Author Affiliations
Yi Zhang, Shanghai Univ. (China)
Lin-jun Wang, Shanghai Univ. (China)
Jian Huang, Shanghai Univ. (China)
Ke Tang, Shanghai Univ. (China)
Fengjuan Zhang, Shanghai Univ. (China)
Qian Fang, Shanghai Univ. (China)
Qingkai Zeng, Shanghai Univ. (China)
Run Xu, Shanghai Univ. (China)
Jijun Zhang, Shanghai Univ. (China)
Jiahua Min, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV
Jian-Jun He; Guang-Hua Duan; Fumio Koyama; Ming C. Wu, Editor(s)

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