Share Email Print
cover

Proceedings Paper

Experimental scheme for observation of anomalous Kossel effect in semiconductor crystals
Author(s): Pavel G Medvedev; Mikhail A. Chuev; Mikhail V. Kovalchuk; Elhan M. Pashaev; Ilia A. Subbotin; Sergey N. Yakunin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A theoretical analysis of the experimental scheme geometry for the anomalous Kossel effect observation is performed. Fluorescence radiation from germanium is induced by characteristic MoKα radiation incident on the crystal at a small angle close to the specular reflection angle. First experimental results on observation of anomalous Kossel lines from the germanium crystal are presented.

Paper Details

Date Published: 26 February 2010
PDF: 7 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752115 (26 February 2010); doi: 10.1117/12.854221
Show Author Affiliations
Pavel G Medvedev, Institute of Physics and Technology (Russian Federation)
Mikhail A. Chuev, Institute of Physics and Technology (Russian Federation)
Mikhail V. Kovalchuk, Russian Research Ctr. Kurchatov Institute (Russian Federation)
Elhan M. Pashaev, Russian Research Ctr. Kurchatov Institute (Russian Federation)
Ilia A. Subbotin, Russian Research Ctr. Kurchatov Institute (Russian Federation)
Sergey N. Yakunin, Russian Research Ctr. Kurchatov Institute (Russian Federation)


Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top