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Proceedings Paper

Device history dependent effects in dark injection transient current measurements of charge mobility in organic light-emitting diodes
Author(s): Steven Knox; Helen Jones; Trevor Esward
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Paper Abstract

Charge mobility is a key parameter for understanding the performance of organic semiconductor devices and materials. A range of techniques is available that can measure charge mobility with varying accuracy and precision. We review the dark injection transient current method from a metrology perspective with a particular emphasis on quantification of uncertainties that arise from the technique itself and from the inherent variability of devices and materials. We have carried out a systematic study of the space-charge-limited dark injection transient current technique as a method of measuring charge mobility in polymer organic light emitting diodes, paying particular attention to varying the amplitude, duration and repetition rate of the applied voltage and to environmental factors such as changes in the ambient temperature. We show that the results of the experiment depend strongly on the previous history of the device and that both long-term and short-term effects can be identified. As a result, we are able to quantify the contribution of these effects to the uncertainties associated with estimates of charge mobility obtained using the dark injection method.

Paper Details

Date Published: 18 May 2010
PDF: 10 pages
Proc. SPIE 7722, Organic Photonics IV, 772218 (18 May 2010); doi: 10.1117/12.854217
Show Author Affiliations
Steven Knox, National Physical Lab. (United Kingdom)
Helen Jones, Univ. of Southampton (United Kingdom)
Trevor Esward, National Physical Lab. (United Kingdom)


Published in SPIE Proceedings Vol. 7722:
Organic Photonics IV
Paul L. Heremans; Reinder Coehoorn; Chihaya Adachi, Editor(s)

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