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Proceedings Paper

Si wires growth by using of magnetron sputtering method
Author(s): S. A. Evlashin; V. A. Krivchenko; P. V. Pastchenko; A. T. Rakhimov; N. V. Suetin; M. A. Timofeyev
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Paper Abstract

New method of Si wires synthesis by magnetron sputtering of solid target as a Si source is described. This method is simple, safe and cheaper in comparison with Chemical Vapor Deposition (CVD). Influence of silicon atom flow rates (target sputtering rate) and substrate temperature on the growth of different Si structures were studied. It was found that Si wires have different morphology, which depends on the Si flux and substrate temperature.

Paper Details

Date Published: 26 February 2010
PDF: 8 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752111 (26 February 2010); doi: 10.1117/12.854206
Show Author Affiliations
S. A. Evlashin, Lomonosov Moscow State Univ. (Russian Federation)
V. A. Krivchenko, Lomonosov Moscow State Univ. (Russian Federation)
P. V. Pastchenko, Lomonosov Moscow State Univ. (Russian Federation)
A. T. Rakhimov, Lomonosov Moscow State Univ. (Russian Federation)
N. V. Suetin, Lomonosov Moscow State Univ. (Russian Federation)
M. A. Timofeyev, Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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