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Proceedings Paper

All-optical switching in photonic crystals based on porous silicon
Author(s): Svetlana M. Afonina; Eugene D. Maslennikov; Stanislav V. Zabotnov; Leonid A. Golovan
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Paper Abstract

Photonic crystal as the porous silicon multilayer structure was designed and formed. Such structures can be characterized by increased nonlinear optical response due to the weak light localization and could be used to implement all-optical switching. We showed the possibility of the essential photonic band gap edge shift due to a shift of the photonic bandgap edge in the intense laser radiation field due to light self-action effect. All-optical switching in photonic crystals allows to realize logic gates that can be implemented in photonic devices.

Paper Details

Date Published: 15 May 2010
PDF: 7 pages
Proc. SPIE 7713, Photonic Crystal Materials and Devices IX, 77131M (15 May 2010); doi: 10.1117/12.854054
Show Author Affiliations
Svetlana M. Afonina, Lomonosov Moscow State Univ. (Russian Federation)
Eugene D. Maslennikov, Lomonosov Moscow State Univ. (Russian Federation)
Stanislav V. Zabotnov, Lomonosov Moscow State Univ. (Russian Federation)
Leonid A. Golovan, Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 7713:
Photonic Crystal Materials and Devices IX
Hernán R. Míguez; Sergei G. Romanov; Lucio Claudio Andreani; Christian Seassal, Editor(s)

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