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Proceedings Paper

Accuracy of ellipsometric measurements of Si-SiO2 structures
Author(s): V. P. Gavrilenko; Yu. A. Novikov; A. V. Rakov; P. A. Todua
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Paper Abstract

We consider features and restrictions of ellipsometry as applied to the system consisting of a silicon dioxide film on silicon, which is widely used in nanoelectronics. A method is developed for ellipsometric determination of the presence or absence of the "film-substrate" interfacial layer. Contributions of various factors into the total measurement uncertainty are analyzed, including the factors related to the ellipsometer characteristics.

Paper Details

Date Published: 14 May 2010
PDF: 10 pages
Proc. SPIE 7718, Optical Micro- and Nanometrology III, 77181B (14 May 2010); doi: 10.1117/12.853898
Show Author Affiliations
V. P. Gavrilenko, Ctr. for Surface and Vacuum Research (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
Yu. A. Novikov, Moscow Institute of Physics and Technology (Russian Federation)
A. M. Prokhorov General Physics Institute (Russian Federation)
A. V. Rakov, Moscow Institute of Physics and Technology (Russian Federation)
P. A. Todua, Ctr. for Surface and Vacuum Research (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 7718:
Optical Micro- and Nanometrology III
Christophe Gorecki; Anand Krishna Asundi; Wolfgang Osten, Editor(s)

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