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Proceedings Paper

Optimization of parameters of process deep plasmachemical etching of silicon for elements MEMS
Author(s): A. I. Vinogradov; N. M. Zarjankin; J. A. Mihajlov; E. P. Prokopev; S. P. Timoshenkov
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Paper Abstract

Dependences of characteristics of deep silicon etching on various process parameters are investigated. The method of planning multifactorial experiment is applied to a finding of the optimum recipes providing high selectivity to a mask and decrease of ARDE. Results of research are used by manufacturing of real MEMS structures.

Paper Details

Date Published: 26 February 2010
PDF: 7 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210B (26 February 2010); doi: 10.1117/12.853837
Show Author Affiliations
A. I. Vinogradov, Moscow State Institute of Electronic Technologies (Russian Federation)
N. M. Zarjankin, Moscow State Institute of Electronic Technologies (Russian Federation)
J. A. Mihajlov, Moscow State Institute of Electronic Technologies (Russian Federation)
E. P. Prokopev, Moscow State Institute of Electronic Technologies (Russian Federation)
S. P. Timoshenkov, Moscow State Institute of Electronic Technologies (Russian Federation)


Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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