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Proceedings Paper

Traveling wave modeling, simulation, and analysis of quantum-dot mode-locked semiconductor lasers
Author(s): Mindaugas Radziunas; Andrei G. Vladimirov; Evgeny A. Viktorov
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Paper Abstract

We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.

Paper Details

Date Published: 27 April 2010
PDF: 8 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77200X (27 April 2010); doi: 10.1117/12.853825
Show Author Affiliations
Mindaugas Radziunas, Weierstrass Institute for Applied Analysis and Stochastics (Germany)
Andrei G. Vladimirov, Weierstrass Institute for Applied Analysis and Stochastics (Germany)
Evgeny A. Viktorov, Univ. Libre de Bruxelles (Belgium)


Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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