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Proceedings Paper

A novel Monte Carlo simulation code for linewidth measurement in critical dimension scanning electron microscopy
Author(s): Alexander Koschik; Mauro Ciappa; Stephan Holzer; Maurizio Dapor; Wolfgang Fichtner
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Paper Abstract

Besides the use of the most sophisticated equipment, accurate nanometrology for the most advanced CMOS processes requires that the physics of image formation in scanning electron microscopy (SEM) being modeled to extract critical dimensions. In this paper, a novel Monte Carlo simulation code based on the energy straggling principle is presented, which includes original physical models for electron scattering, the use of a standard Monte Carlo code for tracking and scoring, and the coupling with a numerical device simulator to calculate charging effects.

Paper Details

Date Published: 3 June 2010
PDF: 12 pages
Proc. SPIE 7729, Scanning Microscopy 2010, 77290X (3 June 2010); doi: 10.1117/12.853804
Show Author Affiliations
Alexander Koschik, ETH Zürich (Switzerland)
Mauro Ciappa, ETH Zürich (Switzerland)
Stephan Holzer, ETH Zürich (Switzerland)
Maurizio Dapor, FBK-IRST (Italy)
Univ. degli Studi di Trento (Italy)
Wolfgang Fichtner, ETH Zürich (Switzerland)

Published in SPIE Proceedings Vol. 7729:
Scanning Microscopy 2010
Michael T. Postek; Dale E. Newbury; S. Frank Platek; David C. Joy, Editor(s)

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