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Proceedings Paper

Electron optical spin polarization in broken-gap heterostructures
Author(s): A. Zakharova; K. A. Chao; Igor Semenikhin
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Paper Abstract

We have investigated in detail the contributions of different symmetry breaking mechanisms into the electron optical spin polarization in asymmetrical quantum wells made from zinc-blende materials such as the AlSb/InAs/GaSb/AlSb broken-gap quantum wells which can be used as an active region of very promising mid-infrared semiconductor laser. The considered structure is grown on GaSb along the [001] direction and contains also the p-type contacts to the left and to the right side of the structure. We have found that the maximum value of the initial electron optical spin polarization can be about 40 % if the angle between the vector n along the direction of light propagation and the growth direction is π/10.

Paper Details

Date Published: 26 February 2010
PDF: 6 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210W (26 February 2010); doi: 10.1117/12.853748
Show Author Affiliations
A. Zakharova, Institute of Physics and Technology (Russian Federation)
K. A. Chao, Lund Univ. (Sweden)
Linköping Univ. (Sweden)
Igor Semenikhin, Institute of Physics and Technology (Russian Federation)

Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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