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Proceedings Paper

Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation
Author(s): Valentin O. Turin; Alexander V. Sedov; Gennady I. Zebrev; Benjamin Iñiguez; Michael S. Shur
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Paper Abstract

Entry level MOSFET and TFT models use channel-length modulation parameter λ to account for differential conductance after saturation. This is done by multiplying the expression for the drain current but the 1+λVDS factor, where VDS is the drain-to-source bias. However, this traditional approach suffers from non-monotonic behavior of the differential conductance with increasing drain-to-source bias. In the improved model, we offer a new approach that gives the correct monotonic decrease of the differential conductance. This improved model uses the standard set of MOSFET compact model parameters making it compatible with existing CAD tools.

Paper Details

Date Published: 26 February 2010
PDF: 9 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75211H (26 February 2010); doi: 10.1117/12.853740
Show Author Affiliations
Valentin O. Turin, Orel State Technical Univ. (Russian Federation)
Alexander V. Sedov, Orel State Technical Univ. (Russian Federation)
Gennady I. Zebrev, National Research Nuclear Univ. (Russian Federation)
Benjamin Iñiguez, Rovira i Virgili Univ. (Spain)
Michael S. Shur, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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