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Proceedings Paper

Quasi-optical technique for sensing bond quality of silicon wafers
Author(s): A. Elhawil; I. Huynen; J.-P. Raskin; C. Roda Neve; B. Olbrechts; J. Stiens; R. Vounckx
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Paper Abstract

In this paper, we investigate a novel fast and reliable method to check the bonding quality of silicon wafers. It is based on illuminating the wafers with a high frequency waves (110 - 170 GHz) using quasi-optical technique. The reflected energy is used to evaluate the bonding strength. The reported experimental study is compared with the Infrared images.

Paper Details

Date Published: 13 May 2010
PDF: 7 pages
Proc. SPIE 7716, Micro-Optics 2010, 77161R (13 May 2010); doi: 10.1117/12.853667
Show Author Affiliations
A. Elhawil, Vrije Univ. Brussels (Belgium)
I. Huynen, Univ. Catholique de Louvain (Belgium)
J.-P. Raskin, Univ. Catholique de Louvain (Belgium)
C. Roda Neve, Univ. Catholique de Louvain (Belgium)
B. Olbrechts, Univ. Catholique de Louvain (Belgium)
J. Stiens, Vrije Univ. Brussels (Belgium)
R. Vounckx, Vrije Univ. Brussels (Belgium)

Published in SPIE Proceedings Vol. 7716:
Micro-Optics 2010
Hugo Thienpont; Peter Van Daele; Jürgen Mohr; Hans Zappe, Editor(s)

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