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Proceedings Paper

Low-resistance Ge/Au/Ni/Ti/Au-based ohmic contact to n-GaAs
Author(s): V. Kagadei; E. Erofeev
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Paper Abstract

The work investigates the influence of the mode and conditions for deposition of a Ti thin film on the specific contact resistance and thermal stability of Ge/Au/Ni/Ti/Au based ohmic contacts to n-GaAs. Deposition techniques of a Ti diffusion barrier were discovered in which a fifty-fold reduction in specific contact resistance was observed, and also an increase in the thermal stability of the surface morphology on the edge of the contact areas. The factors influencing the specific contact resistance are: the angle at which the titanium atoms impact on the GaAs surface, the rate of deposition of the Ti film, and also the residual pressure during deposition. The factor which has an influence on the thermal stability of the morphology of the contact edges appears to be the angle of incidence of the Ti atoms.

Paper Details

Date Published: 26 February 2010
PDF: 6 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210I (26 February 2010); doi: 10.1117/12.853581
Show Author Affiliations
V. Kagadei, Research and Production Company Micran (Russian Federation)
E. Erofeev, Scientific Research Institute of Electrical Communication Systems (Russian Federation)

Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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