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Proceedings Paper

Radiation-hardening-by-design with circuit-level modeling of total ionizing dose effects in modern CMOS technologies
Author(s): M. S. Gorbunov; G. I. Zebrev; P. N. Osipenko
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Paper Abstract

Physical model of total ionizing dose (TID) effects previously developed and successfully verified by authors was embedded to BSIM3v3 model implemented using Verilog-A language. This tool is fully compatible with standard SPICE simulators and allows taking into account the electrical bias conditions for each transistor during irradiation.

Paper Details

Date Published: 26 February 2010
PDF: 8 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75211F (26 February 2010); doi: 10.1117/12.853580
Show Author Affiliations
M. S. Gorbunov, Scientific-Research Institute of System Analysis (Russian Federation)
G. I. Zebrev, National Research Nuclear Univ. (Russian Federation)
P. N. Osipenko, Scientific-Research Institute of System Analysis (Russian Federation)


Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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