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Proceedings Paper

Modeling of the interfacial separation work in relation to impurity concentration in adjoining materials
Author(s): Ilia M Alekseev; Tariel M. Makhviladze; Airat Kh. Minushev; Mikhail E. Sarychev
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Paper Abstract

On the basis of the general thermodynamic approach developed in a model describing the influence of point defects on the separation work at an interface of solid materials is developed. The kinetic equations describing the defect exchange between the interface and the material bulks are formulated. The model have been applied to the case when joined materials contain such point defects as impurity atoms (interstitial and substitutional), concretized the main characteristic parameters required for a numerical modeling as well as clarified their domains of variability. The results of the numerical modeling concerning the dependences on impurity concentrations and the temperature dependences are obtained and analyzed. Particularly, the effects of interfacial strengthening and adhesion incompatibility predicted analytically for the case of impurity atoms are verified and analyzed.

Paper Details

Date Published: 26 February 2010
PDF: 9 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75211C (26 February 2010); doi: 10.1117/12.853475
Show Author Affiliations
Ilia M Alekseev, Institute of Physics and Technology (Russian Federation)
Tariel M. Makhviladze, Institute of Physics and Technology (Russian Federation)
Airat Kh. Minushev, Institute of Physics and Technology (Russian Federation)
Mikhail E. Sarychev, Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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