Share Email Print

Proceedings Paper

Electromigration theory and its applications to integrated circuit metallization
Author(s): Tariel M. Makhviladze; Mikhail E. Sarychev
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The theory of electromigration-induced nano- and microprocesses that terminate in failure of thin-film conductors is given. These processes determine operational reliability of IC metallization system. The physical foundations of degradation and lifetime of interconnects are analyzed. The various mechanisms of their deformations and failures that are of practical importance for different types of multilevel arrangement and microstructure are studied. The full 3D theory developed considers the electromigration failures as a set of processes occurring at the nano-, micro- and mesoscale. We reduced the general equations in order to describe specific conducting systems, developed the methods of their numerical modeling, and created software packages. It allows carrying out the simulation of electromigration failures and performing the lifetime analysis for various interconnect systems that are of prime practical significance as regards the operation of IC metallization, the modeling being over a wide range of material, geometrical, structural, and operational parameters. Some examples of the reliability analysis and of the analysis of the most likely failure locations in dependence on the current density, parameters of multilevel metallization, temperature, and polycrystalline grain microstructure of interconnects are represented. We also put forward an approach to modeling the electromigration in conductors containing impurities.

Paper Details

Date Published: 26 February 2010
PDF: 15 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752117 (26 February 2010); doi: 10.1117/12.853391
Show Author Affiliations
Tariel M. Makhviladze, Institute of Physics and Technology (Russian Federation)
Mikhail E. Sarychev, Institute of Physics and Technology (Russian Federation)

Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top