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Proceedings Paper

Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films
Author(s): Vladimir A.. Volodin; Taisiya T. Korchagina; Gennadiy N. Kamaev; Aleksandr Kh. Antonenko; Jurgen Koch; Boris N. Chichkov
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Paper Abstract

Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.

Paper Details

Date Published: 26 February 2010
PDF: 8 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210X (26 February 2010); doi: 10.1117/12.853385
Show Author Affiliations
Vladimir A.. Volodin, Institute of Semiconductor Physics (Russian Federation)
Novosibirsk State Univ. (Russian Federation)
Taisiya T. Korchagina, Institute of Semiconductor Physics (Russian Federation)
Gennadiy N. Kamaev, Institute of Semiconductor Physics (Russian Federation)
Aleksandr Kh. Antonenko, Institute of Semiconductor Physics (Russian Federation)
Jurgen Koch, Laser Zentrum Hannover e.V. (Germany)
Boris N. Chichkov, Laser Zentrum Hannover e.V. (Germany)


Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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