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Proceedings Paper

High data rate 850-nm oxide VCSEL for 20 Gbit/s application and beyond
Author(s): Chen Ji; Jingyi Wang; David Söderström; Laura Giovane
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Paper Abstract

In this paper we report a 850nm oxide VCSEL operating at 20 Gbit/s (PRBS31) with a 5 dB Extinction Ratio, based on a volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We present detailed time and frequency domain VCSEL characterization results, and a finite element simulation showing good agreement with experimental data.

Paper Details

Date Published: 3 December 2009
PDF: 7 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 763119 (3 December 2009); doi: 10.1117/12.853250
Show Author Affiliations
Chen Ji, Avago Technologies Ltd. (United States)
Jingyi Wang, Avago Technologies Ltd. (United States)
David Söderström, Avago Technologies Ltd. (United States)
Laura Giovane, Avago Technologies Ltd. (United States)


Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV
Jian-Jun He; Guang-Hua Duan; Fumio Koyama; Ming C. Wu, Editor(s)

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