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Proceedings Paper

Optimization of near-surficial annealing for decreasing of depth of p-n-junction in semiconductor heterostructure
Author(s): E. L. Pankratov
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Paper Abstract

In this paper analysis of dopant redistribution during formation of p-n-junction in semiconductor heterostructure by laser or microwave annealing has been done. It has been shown, that inhomogeneity of the heterostructure after annealing with appropriate duration leads to simultaneously increasing of sharpness of p-n-junction and homogeneity of dopant distribution in doped area. Inhomogeneity of temperature distribution leads to simultaneously increasing of both effects. Some conditions on properties of doped heterostructure and annealing time for simultaneously increasing of sharpness of p-n-junction and homogeneity of dopant distribution in doped area are formulated.

Paper Details

Date Published: 26 February 2010
PDF: 9 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75211D (26 February 2010); doi: 10.1117/12.853230
Show Author Affiliations
E. L. Pankratov, Nizhny Novgorod State Univ. of Architecture and Civil Engineering (Russian Federation)


Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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