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Proceedings Paper

Development of spin-on hard mask materials under resist in nano imprint lithography
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Paper Abstract

Nanoimprint lithography is a newly developed patterning method that employs a hard template for the patterning of structures at micron and nanometerscales. This technique has many advantages such as cost reduction, high resolution, low line edge roughness (LER), and easy operation. However, resist peeling, defects, low degree of planarization, and low throughput issues present challenges that must be resolved in order to mass produce advanced nanometer-scale devices. In this study, the new approach of using spin-on hard mask materials under the resist to modify its adhesion during a UV irradiation process in nano imprint lithography was proposed to increase process latitudes. The performance of this process is evaluated by using step and flash imprint lithography. We expect that these spin-on hard mask materials (NCI-NIL-U series) under organic resist will be one of the most promising materials in the next generation of nano imprint lithography.

Paper Details

Date Published: 31 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391C (31 March 2010); doi: 10.1117/12.853200
Show Author Affiliations
Satoshi Takei, Nissan Chemical Industries, Ltd. (Japan)
The Univ. of Texas at Austin (United States)
Osaka Univ. (Japan)
Tsuyoshi Ogawa, The Univ. of Texas at Austin (United States)
Ryan Deschner, The Univ. of Texas at Austin (United States)
Kane Jen, The Univ. of Texas at Austin (United States)
Makoto Hanabata, Nissan Chemical Industries, Ltd. (Japan)
C. Grant Willson, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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