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Proceedings Paper

Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO2
Author(s): N. P. Hylton; I. F. Crowe; A. P. Knights; M. P. Halsall; S. Ruffell; R. M. Gwilliam
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Paper Abstract

We present the results of an optical investigation of a series of Er doped silicon nanocrystal (Si-NC) samples which were fabricated via ion implantation into SiO2 on sapphire substrates, followed by a range of rapid thermal processing. The photoluminescence spectra of the Si-NC emission revealed an increase in luminescence intensity and a red-shift of the peak wavelength as a function of annealing conditions. We attribute the former effect to the reduction of implantation induced defects with increasing annealing temperature/duration. Measurements of the rate of decay of photoluminescence intensity at room temperature show a corresponding increase in the carrier lifetimes which is also an indication of a reduced contribution from non-radiative centers. The red-shift of the peak Si-NC intensity is ascribed to an increasing mean Si-NC size as a function of the annealing conditions. Also presented is an estimation of the relative Er sensitization which reveals that the smallest Si-NC size distribution leads to the greatest sensitization ratio. Further investigation in the form of excitation spectroscopy was used to show that Er ions are sensitized not only by energy transfer from the Si-NCs, but also, crucially, from defect states in the SiO2.

Paper Details

Date Published: 16 February 2010
PDF: 7 pages
Proc. SPIE 7606, Silicon Photonics V, 760604 (16 February 2010); doi: 10.1117/12.852922
Show Author Affiliations
N. P. Hylton, The Univ. of Manchester (United Kingdom)
I. F. Crowe, The Univ. of Manchester (United Kingdom)
A. P. Knights, McMaster Univ. (Canada)
M. P. Halsall, The Univ. of Manchester (United Kingdom)
S. Ruffell, The Australian National Univ. (Australia)
R. M. Gwilliam, Univ. of Surrey (United Kingdom)


Published in SPIE Proceedings Vol. 7606:
Silicon Photonics V
Joel A. Kubby; Graham T. Reed, Editor(s)

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