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Proceedings Paper

Microstructure and texture analysis of advanced copper using electron backscattered diffraction and scanning transmission electron microscopy
Author(s): R. Galand; L. Clément; P. Waltz; Y. Wouters
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Paper Abstract

In this article, we focus on the characterization of copper interconnect by Electron Backscattered Diffraction (EBSD) in the final aim of reliability issue investigation. In a first time we demonstrate that we achieve to characterize copper lines of 70 nm width after some improvements in sample preparation. Then, after showing that EBSD is well adapted to characterize our structure even for very small dimensions (line width smaller than 100 nm), we propose to associate Transmission Electron Microscope in scanning mode (STEM) to complete information given by EBSD and localize defects due to electromigration. We begin by highlighting the very good correspondence between EBSD map and STEM images on line with small microstructure and finally we apply both techniques on a tested copper line after electromigration. In this case we show the relevance of using STEM to localize the defect due to electromigration which can not be seen on EBSD map.

Paper Details

Date Published: 8 June 2010
PDF: 7 pages
Proc. SPIE 7729, Scanning Microscopy 2010, 77290B (8 June 2010); doi: 10.1117/12.852908
Show Author Affiliations
R. Galand, STMicroelectronics (France)
L. Clément, STMicroelectronics (France)
P. Waltz, STMicroelectronics (France)
Y. Wouters, Science et Ingénierie des Matériaux et Procédés (France)


Published in SPIE Proceedings Vol. 7729:
Scanning Microscopy 2010
Michael T. Postek; Dale E. Newbury; S. Frank Platek; David C. Joy, Editor(s)

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