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Proceedings Paper

Design of complex semiconductor integrated structures
Author(s): Cristina Arellano; Sergei Mingaleev; Andrey Novitsky; Igor Koltchanov; André Richter
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Paper Abstract

We present the benefits and limitations for designing complex optical semiconductor-based integrated structures by means of advanced numerical modeling. Multi-section tunable laser designs are presented and their tuning properties are analyzed for different architectures. We introduce a model of an integrated SOA with electroabsorption modulator. Its spectral properties are analyzed function of the parameters of the absorber section, showing the influence on the extinction ration of the generated signal. An InP-type Mach-Zehnder modulator is designed, illustrating the models of Kerr, Frank-Keldysh and QCSE effects. An example of a photo-detector demonstrates how dimensions and absorption parameters can be optimized to increase its detection bandwidth.

Paper Details

Date Published: 3 December 2009
PDF: 8 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76310K (3 December 2009); doi: 10.1117/12.852805
Show Author Affiliations
Cristina Arellano, VPIsystems (Germany)
Sergei Mingaleev, VPI Development Ctr. (Belarus)
Andrey Novitsky, VPI Development Ctr. (Belarus)
Igor Koltchanov, VPIsystems (Germany)
André Richter, VPIsystems (Germany)

Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV
Jian-Jun He; Guang-Hua Duan; Fumio Koyama; Ming C. Wu, Editor(s)

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