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Proceedings Paper

Flexible solar cells for micro-autonomous systems technology
Author(s): Luke F. Lester; Kai Yang; Mohamed A. El-Emawy; Therese Saiz; Ryan A. Clark; Andrew Hollowell; Olga Lavrova
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Paper Abstract

Insensitivity to edge recombination is observed in GaAs-based InAs/InGaAs quantum dots-in-a-well (DWELL) solar cells by comparing their current-voltage (IV) plot to GaAs control samples. The edge recombination current component is extracted by analyzing devices of different areas and then compared to DWELL cells of comparable dimensions. The results demonstrate that GaAs-based solar cells incorporating a DWELL design are relatively insensitive to edge recombination by suppressing lateral diffusion of carriers in the intrinsic layer, and thus promising for applications that require small area devices such as concentration or flexible surfaces. Preliminary studies on the integration of these cells onto flexible surfaces such as Kapton and nanopaper are discussed including weight considerations for all the integrated materials.

Paper Details

Date Published: 5 May 2010
PDF: 8 pages
Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76790Y (5 May 2010); doi: 10.1117/12.852598
Show Author Affiliations
Luke F. Lester, The Univ. of New Mexico (United States)
Kai Yang, The Univ. of New Mexico (United States)
Mohamed A. El-Emawy, The Univ. of New Mexico (United States)
Therese Saiz, The Univ. of New Mexico (United States)
Ryan A. Clark, The Univ. of New Mexico (United States)
Andrew Hollowell, The Univ. of New Mexico (United States)
Olga Lavrova, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7679:
Micro- and Nanotechnology Sensors, Systems, and Applications II
Thomas George; M. Saif Islam; Achyut Kumar Dutta, Editor(s)

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