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Proceedings Paper

New material systems for third generation infrared detectors
Author(s): A. Rogalski
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Paper Abstract

Third-generation infrared (IR) systems are being developed nowadays. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well IR photoconductors (QWIPs), are included. Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs). In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

Paper Details

Date Published: 31 December 2009
PDF: 12 pages
Proc. SPIE 7388, Ninth International Conference on Correlation Optics, 73880J (31 December 2009); doi: 10.1117/12.852524
Show Author Affiliations
A. Rogalski, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 7388:
Ninth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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