Share Email Print

Proceedings Paper

Back-thinned CMOS sensor optimization
Author(s): Paul Jerram; David Burt; Neil Guyatt; Vincent Hibon; Joel Vaillant; Yann Henrion
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Back-thinning of a CCD image sensor is a very well established process for achieving high quantum efficiency and the majority of high-specification space and science applications have used such back-thinned devices for many years. CMOS sensors offer advantages over CCDs for a number of these applications and, in principle, it should be possible to back-thin CMOS devices and obtain the same performance as the CCD. This has now been demonstrated by e2v and results from two recent programmes to back-thin CMOS sensors show excellent quantum efficiency values.

Paper Details

Date Published: 25 February 2010
PDF: 12 pages
Proc. SPIE 7598, Optical Components and Materials VII, 759813 (25 February 2010); doi: 10.1117/12.852389
Show Author Affiliations
Paul Jerram, e2v technologies plc (United Kingdom)
David Burt, e2v technologies plc (United Kingdom)
Neil Guyatt, e2v technologies plc (United Kingdom)
Vincent Hibon, e2v semiconductors SAS (France)
Joel Vaillant, e2v semiconductors SAS (France)
Yann Henrion, e2v semiconductors SAS (France)

Published in SPIE Proceedings Vol. 7598:
Optical Components and Materials VII
Shibin Jiang; Michel J. F. Digonnet; John W. Glesener; J. Christopher Dries, Editor(s)

© SPIE. Terms of Use
Back to Top