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Proceedings Paper

Thermal annealing effect on the Mg-doped AlGaN/GaN superlattice
Author(s): Baozhu Wang; Shengbiao An; Huanming Wen; Ruihong Wu; Xiaojun Wang; Xiaoliang Wang
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Paper Abstract

Mg-doped AlGaN/GaN superlattice has been grown by metalorganic chemical vapor deposition (MOCVD). Rapid thermal annealing (RTA) treament are carryied out on the samples under nitrogen as protect gas. Hall, photoluminescence (PL), high resolution x-ray diffraction (HRXRD) and atomic-force microscopy (AFM) are used to characterize the electrical, optical and structural properties of the as-grown and annealed samples, respectively. After annealing, the Hall results indicate more Mg acceptors are activated, which leads to higher hole concentration and lower p-type resistivity. The PL intensity of Mg related defect band shows a strong decrease after annealing. The annealing of the superlattice degrade the interface quality of the AlGaN/GaN from the HRXRD results. Many nanometer-grains can be observed on the surface of AlGaN/GaN superlattice from the AFM image. This maybe related with the decomposing of GaN or the separating of Mg from the AlGaN/GaN superlattice.

Paper Details

Date Published: 3 December 2009
PDF: 6 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76312H (3 December 2009); doi: 10.1117/12.852235
Show Author Affiliations
Baozhu Wang, Hebei Univ. of Science and Technology (China)
Institute of Semiconductors (China)
Shengbiao An, Hebei Univ. of Science and Technology (China)
Huanming Wen, Hebei Univ. of Science and Technology (China)
Ruihong Wu, Hebei Univ. of Science and Technology (China)
Xiaojun Wang, Hebei Univ. of Science and Technology (China)
Xiaoliang Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV

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