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Proceedings Paper

1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy
Author(s): Hao Wang; Jiayue Yuan; Peter J. van Veldhoven; Richard Nötzel
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Paper Abstract

Number and size control of InAs quantum dots (QDs) on truncated InP pyramids grown by selective area Metal Organic Vapor Phase Epitaxy (MOVPE) is reported. The facet composition of the pyramid top surface and the relative facet sizes are determined by the shape of the pyramid base and the pyramid height for a certain base size. This allows the precise position and distribution control of the QDs due to preferential nucleation on the {103} and {115} facets. The size of the QDs is adjusted by the growth parameters, e.g., InAs amount and growth rate together with the pyramid top surface size. The QD number, related to the specific shape of the pyramid top surface, is reduced by the shrinking pyramid top surface size during growth. Well defined positioning of four, three, two, and single QDs is realized successfully. Regrowth of a passive InP structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources operating in the 1.55-μm telecom wavelength region and their implementation in photonic integrated circuits.

Paper Details

Date Published: 24 February 2010
PDF: 5 pages
Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 76100N (24 February 2010); doi: 10.1117/12.852205
Show Author Affiliations
Hao Wang, Eindhoven Univ. of Technology (Netherlands)
Jiayue Yuan, Eindhoven Univ. of Technology (Netherlands)
Peter J. van Veldhoven, Eindhoven Univ. of Technology (Netherlands)
Richard Nötzel, Eindhoven Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 7610:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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