Share Email Print
cover

Proceedings Paper

Growth of GaAs nanowires with various thickness of Au film
Author(s): Xian Ye; Hui Huang; Xiaomin Ren; Yisu Yang; Shiwei Cai; Yongqing Huang; Qi Wang
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

GaAs nanowires were grown by the metal organic chemical vapor deposition on the GaAs(111)B substrates via Vapor- Liquid-Solid mechanism with various Au film thickness. Experiment results indicated that thicker Au film results in larger diameters, more dispersed size distribution, and lower density of the nanowires. All NWs are straight from base to top, and no lateral growth occurs. The growth rate of nanowires slightly increases with Au film thickness. It indicates that the growth of GaAs NWs is mainly promoted by the catalyzed chemical reaction at the drop surface, the Au particles surface density could influence the growth rate, and contribution of diffusion from the adatom could be neglected.

Paper Details

Date Published: 3 December 2009
PDF: 6 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76312D (3 December 2009); doi: 10.1117/12.852199
Show Author Affiliations
Xian Ye, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Yisu Yang, Beijing Univ. of Posts and Telecommunications (China)
Shiwei Cai, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV
Jian-Jun He; Guang-Hua Duan; Fumio Koyama; Ming C. Wu, Editor(s)

© SPIE. Terms of Use
Back to Top