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Proceedings Paper

Q-switched Yb-doped microstructure fiber laser using GaAs as saturable absorber
Author(s): Shenggui Fu; Xiaojuan Liu
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Paper Abstract

A passive Q-switched Yb-doped microstructure fiber (MF) laser is demonstrated using a GaAs wafer as the saturable absorber. A high Ytterbium-doped fiber with a core diameter of 21 μm and a numerical aperture of 0.04 was used as the active fiber. The large-diameter core allows for greater energy storage than conventional single-mode core designs and the small NA of the core ensures the good beam quality of the laser. A pulse duration as short as 80 ns was obtained with the maximum repetition rate of 830 Hz. The maximum average output power is 5.8 W at 1080 nm wavelength.

Paper Details

Date Published: 1 December 2009
PDF: 6 pages
Proc. SPIE 7630, Passive Components and Fiber-based Devices VI, 76300P (1 December 2009); doi: 10.1117/12.852193
Show Author Affiliations
Shenggui Fu, Shandong Univ. of Technology (China)
Xiaojuan Liu, Shandong Univ. of Technology (China)


Published in SPIE Proceedings Vol. 7630:
Passive Components and Fiber-based Devices VI
Perry P. Shum, Editor(s)

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