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Proceedings Paper

Fabrication and characterization of 1.3-μm InAs quantum-dot VCSELs and monolithic VCSEL arrays
Author(s): Y. Ding; W. J. Fan; D. W. Xu; L. J. Zhao; Y. Liu; N. H. Zhu
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Paper Abstract

We present fabrication and characterization of 1.3-μm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) and QD-VCSEL arrays. The continuous-wave (CW) output power of single QD-VCSEL of 1.2 mW with lasing wavelength of 1.28 μm is obtained at room temperature (RT) at a bias current of 15 mA without power saturation. The low threshold current of 1.1 mA can be achieved for the single mode device. We investigate the 3-dB modulation bandwidth of QD-VCSELs with oxide aperture size of 5-μm, 10-μm and 15-μm in the small signal frequency response measurements. Modulation bandwidth of 2.65 GHz is achieved for single-mode QD-VCSEL with oxide aperture size of 5 μm at a bias current of 4.5 mA. The maximum modulation bandwidth of 2.5 GHz can be obtained for multimode QD-VCSEL with oxide aperture size of 10 μm at a bias current of 7 mA. The 61 QD-VCSELs array is also investigated at RT without optimization. Maximum CW output power of 28 mW and pulsed output power of 18 mW are demonstrated for 2-D QD-VCSEL array with threshold current of 50 mA. The far field pattern beam angle of QD-VCSEL arrays at two perpendicular directions are about 18 degree.

Paper Details

Date Published: 25 November 2009
PDF: 7 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 763102 (25 November 2009); doi: 10.1117/12.852114
Show Author Affiliations
Y. Ding, Nanyang Technological Univ. (Singapore)
W. J. Fan, Nanyang Technological Univ. (Singapore)
D. W. Xu, Nanyang Technological Univ. (Singapore)
L. J. Zhao, Institute of Semiconductors (China)
Y. Liu, Institute of Semiconductors (China)
N. H. Zhu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV
Jian-Jun He; Guang-Hua Duan; Fumio Koyama; Ming C. Wu, Editor(s)

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