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Proceedings Paper

Low-power electro-optical switch based on a III-V microdisk cavity on a silicon-on-insulator circuit
Author(s): Liu Liu; Günther Roelkens; Thijs Spuesens; Richard Soref; Philippe Regreny; Dries Van Thourhout; Roel Baets
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Paper Abstract

We introduce a compact, low-power electro-optical switch on a silicon-on-insulator circuit through heterogeneous integration. A 10μm diameter III-V microdisk cavity is employed as the switching element. Switching of a 10Gbps optical signal is demonstrated by sweeping the bias between -1.1V and +0.9V with 15dB extinction ratio and 1.2ns switching speed.

Paper Details

Date Published: 3 December 2009
PDF: 6 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76310P (3 December 2009); doi: 10.1117/12.851966
Show Author Affiliations
Liu Liu, IMEC, Univ. Gent (Belgium)
Technical Univ. of Denmark (Denmark)
Günther Roelkens, IMEC, Univ. Gent (Belgium)
Thijs Spuesens, IMEC, Univ. Gent (Belgium)
Richard Soref, Air Force Research Lab. (United States)
Philippe Regreny, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Dries Van Thourhout, IMEC, Univ. Gent (Belgium)
Roel Baets, IMEC, Univ. Gent (Belgium)


Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV
Jian-Jun He; Guang-Hua Duan; Fumio Koyama; Ming C. Wu, Editor(s)

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