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Proceedings Paper

Doping profile effect on picosecond lasing of an internally Q-switched, high-power laser diode
Author(s): Brigitte Lanz; Sergey Vainshtein; Juha Kostamovaara; Vladimir Lantratov; Nikolay Kalyuzhnyy
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Paper Abstract

The recently demonstrated high-power (50W from a 20μm stripe) picosecond (30ps) lasing from a laser diode has led us to address the internal Q-switching phenomenon, discovered four decades ago and not yet fully understood. We found that the realization of a nanosecond or picosecond mode in a diode depends on the doping profile across the structure.

Paper Details

Date Published: 2 December 2009
PDF: 9 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 763113 (2 December 2009); doi: 10.1117/12.851642
Show Author Affiliations
Brigitte Lanz, Univ. of Oulu (Finland)
Sergey Vainshtein, Univ. of Oulu (Finland)
Juha Kostamovaara, Univ. of Oulu (Finland)
Vladimir Lantratov, Ioffe Physical-Technical Institute (Russian Federation)
Nikolay Kalyuzhnyy, Ioffe Physical-Technical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV
Jian-Jun He; Guang-Hua Duan; Fumio Koyama; Ming C. Wu, Editor(s)

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