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Proceedings Paper

Silicon wires and compact multi-mode interference splitters with an uneven splitting ratio
Author(s): Jingtao Zhou; Huajun Shen; Huihui Zhang; Xinyu Liu
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Paper Abstract

We report the fabrication and accurate measurement of propagation and bending losses in silicon wires with submicron dimensions fabricated on silicon-on-insulator wafer. Propagation loss of 0.71±0.03dB/mm for the TE polarization was measured at the 1.55μm. Loss of per 90º bend is measured to be 0.01dB for a bending radius of 5μm. Three types of compact MMI splitters with different splitting-ratios were fabricated and measured. The splitting-ratios are respectively 50:50, 15:85 and 28:72. They exhibited low excess losses of about 1.5~3.9dB. The splitting-ratios were consistent with the design values.

Paper Details

Date Published: 1 December 2009
PDF: 6 pages
Proc. SPIE 7630, Passive Components and Fiber-based Devices VI, 763010 (1 December 2009); doi: 10.1117/12.851579
Show Author Affiliations
Jingtao Zhou, Institute of Microelectronics (China)
Huajun Shen, Institute of Microelectronics (China)
Huihui Zhang, Institute of Microelectronics (China)
Xinyu Liu, Institute of Microelectronics (China)

Published in SPIE Proceedings Vol. 7630:
Passive Components and Fiber-based Devices VI
Perry P. Shum, Editor(s)

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