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Proceedings Paper

Mask roughness and its implications for LER at the 22- and 16nm nodes
Author(s): Patrick P. Naulleau; Simi A. George; Brittany M. McClinton
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Paper Abstract

Line-edge roughness (LER) remains the most significant challenge facing the development of extreme ultraviolet (EUV) resist. The mask, however, has been found to be a significant contributor to image-plane LER. This has long been expected based on modeling and has more recently been demonstrated experimentally. Problems arise from both maskabsorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Understanding the implications this has on mask requirements for the 22-nm half pitch node and below is crucial. Modeling results indicate a replicated surface roughness (RSR) specification of 50 pm and a ruthenium capping layer roughness specification of 440 pm. Moreover, modeling indicates that it is crucial to achieve the current ITRS specifications for mask absorber LER which is significantly smaller than current capabilities.

Paper Details

Date Published: 22 March 2010
PDF: 7 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76362H (22 March 2010); doi: 10.1117/12.851561
Show Author Affiliations
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Simi A. George, Lawrence Berkeley National Lab. (United States)
Brittany M. McClinton, Univ. of California, Berkeley (United States)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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