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Proceedings Paper

Floating gate based ultra-high-sensitivity two-terminal AlGaN/GaN HEMT hydrogen sensor
Author(s): Sazia A. Eliza; Achyut K. Dutta
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Paper Abstract

This paper presents the analytical performances of an AlGaN/GaN High Electron Mobility Transistor (HEMT) based sensor for the detection of H2 gas. The model calculates the changes in drain-to-source current and sensitivity of the device due to adsorbed atomic density of gas at the gate terminal. Simulated results indicate that AlGaN/GaN HEMT based floating gate sensors are highly suitable for the extreme environment detection of various gases with concentration as low as ~ ppb level.

Paper Details

Date Published: 23 April 2010
PDF: 7 pages
Proc. SPIE 7673, Advanced Environmental, Chemical, and Biological Sensing Technologies VII, 76730A (23 April 2010); doi: 10.1117/12.851536
Show Author Affiliations
Sazia A. Eliza, Banpil Photonics, Inc. (United States)
Achyut K. Dutta, Banpil Photonics, Inc. (United States)

Published in SPIE Proceedings Vol. 7673:
Advanced Environmental, Chemical, and Biological Sensing Technologies VII
Tuan Vo-Dinh; Robert A. Lieberman; Günter Gauglitz, Editor(s)

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