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Proceedings Paper

Digital in-line holographic microscopy at 1310 nm with superluminescent light-emitting diode broadband source
Author(s): Weijuan Qu; Oi Choo Chee; Yingjie Yu; Anand Asundi
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Paper Abstract

Infrared digital in-line microscopic holography is achieved using a superlumiescent light emitting diode broadband source at 1310nm. It can be applied for the inspection of bulk material defects as well as some surface defects in silicon wafer. The imaging of a calibrated positive USAF target is used for the demonstration of the resolution improvement. Two pieces of semiconductor silicon wafer each with a slot 10μm in width are placed perpendicular with a 4mm gap to demonstrate the 3D imaging from a single hologram.

Paper Details

Date Published: 14 April 2010
PDF: 6 pages
Proc. SPIE 7522, Fourth International Conference on Experimental Mechanics, 75226M (14 April 2010); doi: 10.1117/12.851401
Show Author Affiliations
Weijuan Qu, Ngee Ann Polytechnic (Singapore)
Oi Choo Chee, Ngee Ann Polytechnic (Singapore)
Yingjie Yu, Shanghai Univ. (China)
Anand Asundi, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 7522:
Fourth International Conference on Experimental Mechanics
Chenggen Quan; Kemao Qian; Anand Krishna Asundi; Fook Siong Chau, Editor(s)

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