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Proceedings Paper

Research on the optical and electrical properties of ITO thin film using magnetron sputtering
Author(s): Changlong Cai; Yujia Zhai; Jing Huang; Xu Yang; Weiguo Liu; Aihua Gao
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Paper Abstract

Due to excellent photoelectrical properties, ITO thin films become the indispensable flat transparent electrode for their practical applications in the flat-panel displays, touch screens, solar cells and electrochromic devices. Therefore, it's very necessary to study photoelectrical properties of ITO films. In this paper, ITO thin films were prepared on the glass substrates by DC magnetron sputtering technology, and measured the transmittance of ITO thin films in the visible region using the spectrophotometer; the resistivities were measured with the four-probe instrument. The effects of sputtering pressure, oxygen-argon flow ratio and sputtering power was researched on photoelectrical performance of ITO thin films. The results show that, the optimum parameters of ITO films prepared are: sputtering pressure 0.6Pa, oxygen-argon flow ratio 1:40, sputtering power 108W. The average transmittance in the visible area is 81.18%, resistivity is 8.9197 × 10-3Ω.cm.

Paper Details

Date Published: 14 April 2010
PDF: 6 pages
Proc. SPIE 7522, Fourth International Conference on Experimental Mechanics, 752268 (14 April 2010); doi: 10.1117/12.851395
Show Author Affiliations
Changlong Cai, Xi'an Technological Univ. (China)
Yujia Zhai, Xi'an Technological Univ. (China)
Jing Huang, Xi'an Technological Univ. (China)
Xu Yang, Xi'an Technological Univ. (China)
Weiguo Liu, Xi'an Technological Univ. (China)
Aihua Gao, Xi'an Technological Univ. (China)

Published in SPIE Proceedings Vol. 7522:
Fourth International Conference on Experimental Mechanics
Chenggen Quan; Kemao Qian; Anand Krishna Asundi; Fook Siong Chau, Editor(s)

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