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Proceedings Paper

High-performance InGaAs/InP-based single-photon avalanche diode with reduced afterpulsing
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Paper Abstract

We report reduced afterpulsing for a high-performance InGaAs/InP single photon avalanche photodiode (SPAD) using a gated-mode passive quenching with active reset (gated-PQAR) circuit. Photon detection efficiency (PDE) and dark count probability (DCP) were measured at a gate repetition rate of 1 MHz. With a double-pulse measurement technique, the afterpulsing probability was measured for various hold-off times. At 230K, 0.3% afterpulsing probability for a 10 ns hold-off time was achieved with 13% PDE, 2×10-6 DCP and 0.4 ns effective gate width. For the same hold off time, 30% PDE and 1×10-5 DCP was achieved with 6% afterpulsing probability for an effective gate width of 0.7 ns.

Paper Details

Date Published: 29 April 2010
PDF: 7 pages
Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810S (29 April 2010); doi: 10.1117/12.851356
Show Author Affiliations
Chong Hu, Univ. of Virginia (United States)
Xiaoguang Zheng, Univ. of Virginia (United States)
Joe C. Campbell, Univ. of Virginia (United States)
Bora M. Onat, Princeton Lightwave, Inc. (United States)
Xudong Jiang, Princeton Lightwave, Inc. (United States)
Mark A. Itzler, Princeton Lightwave, Inc. (United States)


Published in SPIE Proceedings Vol. 7681:
Advanced Photon Counting Techniques IV
Mark A. Itzler; Joe C. Campbell, Editor(s)

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