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Proceedings Paper

A fully-integrated W-band imaging receiver IC in silicon-germanium BiCMOS technology
Author(s): Leland Gilreath; Vipul Jain; Hsin-Cheng Yao; Le Zheng; Payam Heydari
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Paper Abstract

A fully-integrated silicon-based 94-GHz direct-detection imaging receiver with on-chip Dicke switch and baseband circuitry is demonstrated. Fabricated in a 0.18-μm SiGe BiCMOS technology (fT/fMAX = 200 GHz), the receiver chip achieves a peak imager responsivity of 43 MV/W with a 3-dB bandwidth of 26 GHz. A balanced LNA topology with an embedded Dicke switch provides 30-dB gain and enables a temperature resolution of 0.3-0.4 K. Initial imaging measurements using the chip along with off-chip antennas are also presented. The imager chip consumes 200 mW from a single 1.8-V power supply.

Paper Details

Date Published: 27 April 2010
PDF: 9 pages
Proc. SPIE 7670, Passive Millimeter-Wave Imaging Technology XIII, 76700N (27 April 2010); doi: 10.1117/12.851263
Show Author Affiliations
Leland Gilreath, Univ. of California, Irvine (United States)
Vipul Jain, SaberTek (United States)
Hsin-Cheng Yao, Univ. of California, Irvine (United States)
Le Zheng, Univ. of California, Irvine (United States)
Payam Heydari, Univ. of California, Irvine (United States)

Published in SPIE Proceedings Vol. 7670:
Passive Millimeter-Wave Imaging Technology XIII
David A. Wikner; Arttu R. Luukanen, Editor(s)

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