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Proceedings Paper

Mask roughness induced LER: a rule of thumb
Author(s): Brittany M. McClinton; Patrick P. Naulleau
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Paper Abstract

Much work has already been done on how both the resist and line-edge roughness (LER) on the mask affect the final printed LER. What is poorly understood, however, is the extent to which system-level effects such as mask surface roughness, illumination conditions, and defocus couple to speckle at the image plane, and currently factor into LER limits. Here, we propose a "rule-of-thumb" simplified solution that provides a fast and powerful method to obtain mask roughness induced LER. We present modeling data on an older generation mask with a roughness of 230 pm as well as the ultimate target roughness of 50 pm. Moreover, we consider feature sizes of 50 nm and 22 nm, and show that as a function of correlation length, the LER peaks at the condition that the correlation length is approximately equal to the resolution of the imaging optic.

Paper Details

Date Published: 22 March 2010
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76362G (22 March 2010); doi: 10.1117/12.851226
Show Author Affiliations
Brittany M. McClinton, Univ. of California, Berkeley (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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