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Proceedings Paper

Multilevel integration of patternable low-κ material into advanced Cu BEOL
Author(s): Qinghuang Lin; S. T. Chen; A. Nelson; P. Brock; S. Cohen; B. Davis; N. Fuller; R. Kaplan; R. Kwong; E. Liniger; D. Neumayer; J. Patel; H. Shobha; R. Sooriyakumaran; S. Purushothaman; T. Spooner; R. Miller; R. Allen; R. Wisnieff
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Paper Abstract

In this paper, we wish to report, for the first time, on a simple, low-cost, novel way to form dual-damascene copper (Cu) on-chip interconnect or Back-End-Of-the-Line (BEOL) structures using a patternable low dielectric constant (low-κ) dielectric material concept. A patternable low-κ dielectric material combines the functions of a traditional resist and a dielectric material into one single material. It acts as a traditional resist during patterning and is subsequently converted to a low-κ dielectric material during a post-patterning curing process. No sacrificial materials (separate resists or hardmasks) and their related deposition, pattern transfer (etch) and removal (strip) are required to form dual-damascene BEOL patterns. We have successfully demonstrated multi-level dual-damascene integration of a novel patternable low-κ dielectric material into advanced Cu BEOL. This κ=2.7 patternable low-κ material is based on the industry standard SiCOH-based (silsesquioxane polymer) material platform and is compatible with 248 nm optical lithography. Multilevel integration of this patternable low-κ material at 45 nm node Cu BEOL fatwire levels has been demonstrated with very high electrical yields using the current manufacturing infrastructure.

Paper Details

Date Published: 26 March 2010
PDF: 9 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390J (26 March 2010); doi: 10.1117/12.851225
Show Author Affiliations
Qinghuang Lin, IBM Thomas J. Watson Research Ctr. (United States)
S. T. Chen, IBM Systems and Technology Group (United States)
A. Nelson, IBM Almaden Research Ctr. (United States)
P. Brock, IBM Almaden Research Ctr. (United States)
S. Cohen, IBM Thomas J. Watson Research Ctr. (United States)
B. Davis, IBM Almaden Research Ctr. (United States)
N. Fuller, IBM Thomas J. Watson Research Ctr. (United States)
R. Kaplan, IBM Systems and Technology Group (United States)
R. Kwong, IBM Systems and Technology Group (United States)
E. Liniger, IBM Thomas J. Watson Research Ctr. (United States)
D. Neumayer, IBM Thomas J. Watson Research Ctr. (United States)
J. Patel, IBM Thomas J. Watson Research Ctr. (United States)
H. Shobha, IBM Systems and Technology Group (United States)
R. Sooriyakumaran, IBM Almaden Research Ctr. (United States)
S. Purushothaman, IBM Thomas J. Watson Research Ctr. (United States)
T. Spooner, IBM Corp. (United States)
R. Miller, IBM Almaden Research Ctr. (United States)
R. Allen, IBM Almaden Research Ctr. (United States)
R. Wisnieff, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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