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Proceedings Paper

Mask inspection technologies for 22nm HP and beyond
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Paper Abstract

Reticle quality and the capability to qualify a reticle are key issues for EUV Lithography. We expect current and planned optical inspection systems will provide inspection capability adequate for development and production of 2X HP masks. We illustrate inspection technology extendibility through simulation of 193nm-based inspection of advanced EUV patterned masks. The influence of EUV absorber design for 193nm optical contrast and defect sensitivity will be identified for absorber designs of current interest.

Paper Details

Date Published: 20 March 2010
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360V (20 March 2010); doi: 10.1117/12.850766
Show Author Affiliations
Daniel Wack, KLA-Tencor Corp. (United States)
Qiang Q. Zhang, KLA-Tencor Corp. (United States)
Gregg Inderhees, KLA-Tencor Corp. (United States)
Dan Lopez, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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