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Proceedings Paper

InGaAs/InP SPADs for near-infrared applications: device operating conditions and dedicated electronics
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Paper Abstract

InGaAs/InP Single-Photon Avalanche Diodes (SPADs) have recently shown good performances in terms of dark count rate and detection efficiency, making them suitable for many NIR single-photon counting applications. However, it is mandatory to operate InGaAs/InP SPADs in optimized working conditions and in association with proper dedicated electronics. A complete characterization of primary dark count rate, afterpulsing, detection efficiency and timing jitter is required in order to be able to tailor the working conditions to the specific request. Moreover, very fast quenching circuits can efficiently minimize afterpulsing, while low-jitter front-end circuits detect the avalanche pulse with high timing precision.

Paper Details

Date Published: 28 April 2010
PDF: 12 pages
Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810R (28 April 2010); doi: 10.1117/12.850696
Show Author Affiliations
Alberto Tosi, Politecnico di Milano (Italy)
Alberto Dalla Mora, Politecnico di Milano (Italy)
Simone Tisa, Micro Photon Devices S.r.l. (Italy)
Fabio Acerbi, Politecnico di Milano (Italy)
Franco Zappa, Politecnico di Milano (Italy)
Micro Photon Devices S.r.l. (Italy)
Sergio Cova, Politecnico di Milano (Italy)
Micro Photon Devices S.r.l. (Italy)

Published in SPIE Proceedings Vol. 7681:
Advanced Photon Counting Techniques IV
Mark A. Itzler; Joe C. Campbell, Editor(s)

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